Ann Nanosci Nanotechnol | Volume 2, Issue 1 | Research Article | Open Access
Ah-Jin Cho1,2 and Jang-Yeon Kwon1,2*
1School of Integrated Technology, Yonsei University, South Korea
2Yonsei Institute of Convergence Technology, South Korea
*Correspondance to: Jang-Yeon Kwon
Fulltext PDFStarting from the advent of graphene, Two-Dimensional (2D) materials have been studied by many researchers for their unique characteristics and great potential to be utilized in various applications. Transition Metal Dichalcogenides (TMDs) are family of 2D materials which have been evaluated as more promising materials than graphene, in that they have sizable energy band gaps. Especially, TMD semiconductors which are represented by MoS2 and WSe2 were getting great attention for their high mobility, flexibility and transparency, which are superior to the conventional bulk semiconductor, Si. In addition, any combination of 2D materials can easily form a VAN DER WAALS (vdW) heterojunction, which exhibits excellent interface quality. Therefore the potential of 2D material grows even bigger. In this study, we have fabricated a 2D WSe2 /MoS2 p-n heterojunction device and evaluated the effect of annealing temperature to it, in terms of its electrical and photovoltaic properties. A WSe2 /MoS2 p-n heterojunction showed clear current rectification as a p-n diode, and also operated well as a photovoltaic cell under white light. After conducting vacuum annealing under various temperature conditions to the as-fabricated devices, both the electrical and photovoltaic characteristics have changed in a great extent. The electrical property change was evaluated by means of diode ideality factors and the photovoltaic performance was analyzed by comparing the photovoltaic parameter changes.
Cho A-J, Kwon J-Y. Effect of Annealing Temperature to the Electrical and Photovoltaic Properties of a Two-Dimensional WSe2 /MoS2 P-N Heterojunction. Ann Nanosci Nanotechnol. 2018;2(1):1003.